Mobility improvement of HfO2 LTPS TFTs with nitrogen implantation

Ming Wen Ma, Tsung Yu Yang, Kuo Hsing Kao, Chun Jung Su, Chih Yang Chen, Tien Sheng Chao, Tan Fu Lei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 × 1013 and 5 × 1014cm-2 were implanted after gate dielectric deposition. Significant improvement 94. 4% and 74.4% on transconductance Gm and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0. 177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages674-677
Number of pages4
Publication statusPublished - 2007
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 2007 Mar 122007 Mar 16

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume1

Other

OtherAsia Display 2007, AD'07
Country/TerritoryChina
CityShanghai
Period07-03-1207-03-16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Mobility improvement of HfO2 LTPS TFTs with nitrogen implantation'. Together they form a unique fingerprint.

Cite this