Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Chien Hung Chen; Yiming Li; Chieh Yang Chen; Yu Yu Chen; Sheng Chia Hsu; Wen Tsung Huang; Sheng Yuan Chu

doi:10.1016/j.mee.2013.03.131

Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng Yuan Chu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO₂ is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.

Original language	English
Pages (from-to)	357-359
Number of pages	3
Journal	Microelectronic Engineering
Volume	109
DOIs	https://doi.org/10.1016/j.mee.2013.03.131
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2013.03.131

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@article{e270023417b644df859efe9628a065c6,

title = "Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices",

abstract = "In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.",

author = "Chen, {Chien Hung} and Yiming Li and Chen, {Chieh Yang} and Chen, {Yu Yu} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Chu, {Sheng Yuan}",

note = "Funding Information: This work was supported in part by National Science Council (NSC) , Taiwan under Contract No. NSC 101-2221-E-009-092 and by tsmc, Hsinchu , Taiwan under a 2012–2013 Grant. Mr. Chien-Hung Chen would like to thank for the sample fabrication and characterization from National Nano Device Laboratories, Hsinchu, Taiwan .",

year = "2013",

doi = "10.1016/j.mee.2013.03.131",

language = "English",

volume = "109",

pages = "357--359",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

AU - Chen, Chien Hung

AU - Li, Yiming

AU - Chen, Chieh Yang

AU - Chen, Yu Yu

AU - Hsu, Sheng Chia

AU - Huang, Wen Tsung

AU - Chu, Sheng Yuan

N1 - Funding Information: This work was supported in part by National Science Council (NSC) , Taiwan under Contract No. NSC 101-2221-E-009-092 and by tsmc, Hsinchu , Taiwan under a 2012–2013 Grant. Mr. Chien-Hung Chen would like to thank for the sample fabrication and characterization from National Nano Device Laboratories, Hsinchu, Taiwan .

PY - 2013

Y1 - 2013

N2 - In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.

AB - In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.

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U2 - 10.1016/j.mee.2013.03.131

DO - 10.1016/j.mee.2013.03.131

M3 - Article

AN - SCOPUS:84877752194

SN - 0167-9317

VL - 109

SP - 357

EP - 359

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Abstract

All Science Journal Classification (ASJC) codes

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