Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng Yuan Chu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalMicroelectronic Engineering
Volume109
DOIs
Publication statusPublished - 2013 May 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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