MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

Wen-Chau Liu, H. J. Pan, S. Y. Cheng, W. C. Wang, J. Y. Chen, S. C. Feng, K. H. Yu

Research output: Contribution to journalConference article

Abstract

An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

Original languageEnglish
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - 1999 Sep 1
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: 1999 Sep 51999 Sep 10

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Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
bipolar transistors
metalorganic chemical vapor deposition
heterojunctions
spike potentials
Electric potential
Passivation
low voltage
passivity
high current
emitters
electric potential
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Liu, W-C., Pan, H. J., Cheng, S. Y., Wang, W. C., Chen, J. Y., Feng, S. C., & Yu, K. H. (1999). MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. Journal De Physique. IV : JP, 9 pt 2(8).
Liu, Wen-Chau ; Pan, H. J. ; Cheng, S. Y. ; Wang, W. C. ; Chen, J. Y. ; Feng, S. C. ; Yu, K. H. / MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. In: Journal De Physique. IV : JP. 1999 ; Vol. 9 pt 2, No. 8.
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abstract = "An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.",
author = "Wen-Chau Liu and Pan, {H. J.} and Cheng, {S. Y.} and Wang, {W. C.} and Chen, {J. Y.} and Feng, {S. C.} and Yu, {K. H.}",
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Liu, W-C, Pan, HJ, Cheng, SY, Wang, WC, Chen, JY, Feng, SC & Yu, KH 1999, 'MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor', Journal De Physique. IV : JP, vol. 9 pt 2, no. 8.

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. / Liu, Wen-Chau; Pan, H. J.; Cheng, S. Y.; Wang, W. C.; Chen, J. Y.; Feng, S. C.; Yu, K. H.

In: Journal De Physique. IV : JP, Vol. 9 pt 2, No. 8, 01.09.1999.

Research output: Contribution to journalConference article

TY - JOUR

T1 - MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

AU - Liu, Wen-Chau

AU - Pan, H. J.

AU - Cheng, S. Y.

AU - Wang, W. C.

AU - Chen, J. Y.

AU - Feng, S. C.

AU - Yu, K. H.

PY - 1999/9/1

Y1 - 1999/9/1

N2 - An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

AB - An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033188113&partnerID=8YFLogxK

M3 - Conference article

VL - 9 pt 2

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

SN - 1951-6355

IS - 8

ER -

Liu W-C, Pan HJ, Cheng SY, Wang WC, Chen JY, Feng SC et al. MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. Journal De Physique. IV : JP. 1999 Sep 1;9 pt 2(8).