MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

W. C. Liu, H. J. Pan, S. Y. Cheng, W. C. Wang, J. Y. Chen, S. C. Feng, K. H. Yu

Research output: Contribution to journalConference articlepeer-review


An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

Original languageEnglish
Pages (from-to)Pr8-1163 - Pr8-1169
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - 1999
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: 1999 Sept 51999 Sept 10

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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