MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

W. C. Liu; H. J. Pan; S. Y. Cheng; W. C. Wang; J. Y. Chen; S. C. Feng; K. H. Yu

doi:10.1051/jp4:19998145

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

W. C. Liu, H. J. Pan, S. Y. Cheng, W. C. Wang, J. Y. Chen, S. C. Feng, K. H. Yu

Research output: Contribution to journal › Conference article › peer-review

Abstract

An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

Original language	English
Pages (from-to)	Pr8-1163 - Pr8-1169
Journal	Journal De Physique. IV : JP
Volume	9 pt 2
Issue number	8
DOIs	https://doi.org/10.1051/jp4:19998145
Publication status	Published - 1999
Event	Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain Duration: 1999 Sept 5 → 1999 Sept 10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1051/jp4:19998145

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@article{3f40163f073e481c91ed79f9766733b7,

title = "MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor",

abstract = "An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.",

author = "Liu, {W. C.} and Pan, {H. J.} and Cheng, {S. Y.} and Wang, {W. C.} and Chen, {J. Y.} and Feng, {S. C.} and Yu, {K. H.}",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) ; Conference date: 05-09-1999 Through 10-09-1999",

year = "1999",

doi = "10.1051/jp4:19998145",

language = "English",

volume = "9 pt 2",

pages = "Pr8--1163 -- Pr8--1169",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "8",

}

TY - JOUR

T1 - MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

AU - Liu, W. C.

AU - Pan, H. J.

AU - Cheng, S. Y.

AU - Wang, W. C.

AU - Chen, J. Y.

AU - Feng, S. C.

AU - Yu, K. H.

PY - 1999

Y1 - 1999

N2 - An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

AB - An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 angstrom undoped space and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.

UR - http://www.scopus.com/inward/record.url?scp=0033188113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033188113&partnerID=8YFLogxK

U2 - 10.1051/jp4:19998145

DO - 10.1051/jp4:19998145

M3 - Conference article

AN - SCOPUS:0033188113

SN - 1155-4339

VL - 9 pt 2

SP - Pr8-1163 - Pr8-1169

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 8

T2 - Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)

Y2 - 5 September 1999 through 10 September 1999

ER -

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

Abstract

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