Abstract
A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs/n-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region.
| Original language | English |
|---|---|
| Pages (from-to) | 655-658 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 1998 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- General Physics and Astronomy