MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)

Wen-Chau Liu; Shiou Ying Cheng; Wen Lung Chang; Hsi Jen Pan; Yung Hsin Shie

MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)

Wen-Chau Liu
, Shiou Ying Cheng
, Wen Lung Chang
, Hsi Jen Pan
, Yung Hsin Shie

Research output: Contribution to journal › Article › peer-review

Abstract

A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs/n-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region.

Original language	English
Pages (from-to)	655-658
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

General Materials Science
General Physics and Astronomy

Cite this

@article{49cdb6caf45a44658ae2a3547c099753,

title = "MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)",

abstract = "A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs/n-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region.",

author = "Wen-Chau Liu and Cheng, \{Shiou Ying\} and Chang, \{Wen Lung\} and Pan, \{Hsi Jen\} and Shie, \{Yung Hsin\}",

year = "1998",

language = "English",

pages = "655--658",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)

AU - Liu, Wen-Chau

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Pan, Hsi Jen

AU - Shie, Yung Hsin

PY - 1998

Y1 - 1998

N2 - A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs/n-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region.

AB - A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs/n-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region.

UR - https://www.scopus.com/pages/publications/0032287782

UR - https://www.scopus.com/pages/publications/0032287782#tab=citedBy

M3 - Article

AN - SCOPUS:0032287782

SN - 1092-8669

SP - 655

EP - 658

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

ER -

MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this