MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

W. C. Liu, K. H. Yu, K. W. Lin, K. P. Lin, C. H. Yen, C. C. Cheng, C. K. Wang, H. M. Chuang

Research output: Contribution to journalConference articlepeer-review

Abstract

A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1×100 μ m2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.

Original languageEnglish
Pages (from-to)Pr3951-Pr3955
JournalJournal De Physique. IV : JP
Volume11
Issue number3
Publication statusPublished - 2001
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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