MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

Wen-Chau Liu, K. H. Yu, K. W. Lin, K. P. Lin, C. H. Yen, C. C. Cheng, C. K. Wang, H. M. Chuang

Research output: Contribution to journalConference article

Abstract

A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1×100 μ m2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.

Original languageEnglish
JournalJournal De Physique. IV : JP
Volume11
Issue number3
Publication statusPublished - 2001 Jan 1
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

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High temperature operations
Metallorganic chemical vapor deposition
Field effect transistors
Leakage currents
metalorganic chemical vapor deposition
field effect transistors
breakdown
Electric breakdown
leakage
electrical faults
Electric potential
High electron mobility transistors
high temperature environments
electric potential
Temperature
gallium arsenide
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Liu, W-C., Yu, K. H., Lin, K. W., Lin, K. P., Yen, C. H., Cheng, C. C., ... Chuang, H. M. (2001). MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations. Journal De Physique. IV : JP, 11(3).
Liu, Wen-Chau ; Yu, K. H. ; Lin, K. W. ; Lin, K. P. ; Yen, C. H. ; Cheng, C. C. ; Wang, C. K. ; Chuang, H. M. / MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations. In: Journal De Physique. IV : JP. 2001 ; Vol. 11, No. 3.
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title = "MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations",
abstract = "A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1×100 μ m2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.",
author = "Wen-Chau Liu and Yu, {K. H.} and Lin, {K. W.} and Lin, {K. P.} and Yen, {C. H.} and Cheng, {C. C.} and Wang, {C. K.} and Chuang, {H. M.}",
year = "2001",
month = "1",
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journal = "European Physical Journal: Special Topics",
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Liu, W-C, Yu, KH, Lin, KW, Lin, KP, Yen, CH, Cheng, CC, Wang, CK & Chuang, HM 2001, 'MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations', Journal De Physique. IV : JP, vol. 11, no. 3.

MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations. / Liu, Wen-Chau; Yu, K. H.; Lin, K. W.; Lin, K. P.; Yen, C. H.; Cheng, C. C.; Wang, C. K.; Chuang, H. M.

In: Journal De Physique. IV : JP, Vol. 11, No. 3, 01.01.2001.

Research output: Contribution to journalConference article

TY - JOUR

T1 - MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

AU - Liu, Wen-Chau

AU - Yu, K. H.

AU - Lin, K. W.

AU - Lin, K. P.

AU - Yen, C. H.

AU - Cheng, C. C.

AU - Wang, C. K.

AU - Chuang, H. M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1×100 μ m2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.

AB - A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1×100 μ m2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.

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VL - 11

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