A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimentally, for a 1×100 μ m2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also obtained. These good performances provide the promise for high-breakdown and high-temperature operations.
|Journal||Journal De Physique. IV : JP|
|Publication status||Published - 2001|
|Event||13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece|
Duration: 2001 Aug 26 → 2001 Aug 31
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)