MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• High temperature operations 89%
• Leakage currents 68%
• Field effect transistors 67%
• Electric breakdown 47%
• High electron mobility transistors 24%
• Electric potential 21%
• Temperature 16%

Physics & Astronomy

• metalorganic chemical vapor deposition 60%
• field effect transistors 49%
• breakdown 49%
• leakage 39%
• electrical faults 31%
• high temperature environments 22%
• electric potential 17%
• performance 6%
• temperature 4%

Chemical Compounds

• Leakage Current 83%
• Breakdown Voltage 63%
• Field Effect 63%
• Voltage 30%
• Environment 12%