MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors

W. C. Liu, H. J. Pan, C. H. Yen, K. P. Lin, C. Z. Wu, W. H. Chiou, C. Y. Chen

Research output: Contribution to journalConference articlepeer-review


We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction.

Original languageEnglish
Pages (from-to)Pr3931-Pr3936
JournalJournal De Physique. IV : JP
Issue number3
Publication statusPublished - 2001
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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