MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors

Wen-Chau Liu, H. J. Pan, C. H. Yen, K. P. Lin, C. Z. Wu, W. H. Chiou, C. Y. Chen

Research output: Contribution to journalConference article

Abstract

We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction.

Original languageEnglish
JournalJournal De Physique. IV : JP
Volume11
Issue number3
Publication statusPublished - 2001 Jan 1
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

Fingerprint

Resonant tunneling
Bipolar transistors
Metallorganic chemical vapor deposition
resonant tunneling
bipolar transistors
metalorganic chemical vapor deposition
Excited states
Ground state
high current
emitters
electrons
Electric fields
conduction
ground state
electric fields
Electrons
predictions
excitation
gallium arsenide
Electron Transport

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Liu, Wen-Chau ; Pan, H. J. ; Yen, C. H. ; Lin, K. P. ; Wu, C. Z. ; Chiou, W. H. ; Chen, C. Y. / MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors. In: Journal De Physique. IV : JP. 2001 ; Vol. 11, No. 3.
@article{b442fde232ea4a56b68adceef0d7d396,
title = "MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors",
abstract = "We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction.",
author = "Wen-Chau Liu and Pan, {H. J.} and Yen, {C. H.} and Lin, {K. P.} and Wu, {C. Z.} and Chiou, {W. H.} and Chen, {C. Y.}",
year = "2001",
month = "1",
day = "1",
language = "English",
volume = "11",
journal = "European Physical Journal: Special Topics",
issn = "1951-6355",
publisher = "Springer Verlag",
number = "3",

}

MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors. / Liu, Wen-Chau; Pan, H. J.; Yen, C. H.; Lin, K. P.; Wu, C. Z.; Chiou, W. H.; Chen, C. Y.

In: Journal De Physique. IV : JP, Vol. 11, No. 3, 01.01.2001.

Research output: Contribution to journalConference article

TY - JOUR

T1 - MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors

AU - Liu, Wen-Chau

AU - Pan, H. J.

AU - Yen, C. H.

AU - Lin, K. P.

AU - Wu, C. Z.

AU - Chiou, W. H.

AU - Chen, C. Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction.

AB - We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction.

UR - http://www.scopus.com/inward/record.url?scp=0034842288&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034842288&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034842288

VL - 11

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

SN - 1951-6355

IS - 3

ER -