Abstract
InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
| Original language | English |
|---|---|
| Pages (from-to) | 2253-2256 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C: Conferences |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2003 Dec 1 |
| Event | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
Cite this
}
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates. / Chang, Shoou-Jinn; Su, Y. K.; Lin, Yu-Cheng; Chuang, Wen-Kuei; Chang, C. S.; Sheu, Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2253-2256.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates
AU - Chang, Shoou-Jinn
AU - Su, Y. K.
AU - Lin, Yu-Cheng
AU - Chuang, Wen-Kuei
AU - Chang, C. S.
AU - Sheu, Jinn-Kong
AU - Wen, T. C.
AU - Shei, S. C.
AU - Kuo, C. W.
AU - Fang, D. H.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
AB - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
UR - http://www.scopus.com/inward/record.url?scp=20044381725&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20044381725&partnerID=8YFLogxK
U2 - 10.1002/pssc.200303355
DO - 10.1002/pssc.200303355
M3 - Conference article
AN - SCOPUS:20044381725
SP - 2253
EP - 2256
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -