MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Wen-Kuei Chuang, C. S. Chang, Jinn-Kong Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

Original languageEnglish
Pages (from-to)2253-2256
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

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metalorganic chemical vapor deposition
sapphire
light emitting diodes
electroluminescence
surface roughness
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Chang, Shoou-Jinn ; Su, Y. K. ; Lin, Yu-Cheng ; Chuang, Wen-Kuei ; Chang, C. S. ; Sheu, Jinn-Kong ; Wen, T. C. ; Shei, S. C. ; Kuo, C. W. ; Fang, D. H. / MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates. In: Physica Status Solidi C: Conferences. 2003 ; No. 7. pp. 2253-2256.
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abstract = "InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50{\%} larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.",
author = "Shoou-Jinn Chang and Su, {Y. K.} and Yu-Cheng Lin and Wen-Kuei Chuang and Chang, {C. S.} and Jinn-Kong Sheu and Wen, {T. C.} and Shei, {S. C.} and Kuo, {C. W.} and Fang, {D. H.}",
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MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates. / Chang, Shoou-Jinn; Su, Y. K.; Lin, Yu-Cheng; Chuang, Wen-Kuei; Chang, C. S.; Sheu, Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2253-2256.

Research output: Contribution to journalConference article

TY - JOUR

T1 - MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Lin, Yu-Cheng

AU - Chuang, Wen-Kuei

AU - Chang, C. S.

AU - Sheu, Jinn-Kong

AU - Wen, T. C.

AU - Shei, S. C.

AU - Kuo, C. W.

AU - Fang, D. H.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

AB - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

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