MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang; Y. K. Su; Yu-Cheng Lin; Wen-Kuei Chuang; C. S. Chang; Jinn-Kong Sheu; T. C. Wen; S. C. Shei; C. W. Kuo; D. H. Fang

doi:10.1002/pssc.200303355

MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Wen-Kuei Chuang, C. S. Chang, Jinn-Kong Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

Original language	English
Pages (from-to)	2253-2256
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303355
Publication status	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200303355

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@article{820cfefce9fc486db3f084fe5c4286d0,

title = "MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates",

abstract = "InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.",

author = "Shoou-Jinn Chang and Su, {Y. K.} and Yu-Cheng Lin and Wen-Kuei Chuang and Chang, {C. S.} and Jinn-Kong Sheu and Wen, {T. C.} and Shei, {S. C.} and Kuo, {C. W.} and Fang, {D. H.}",

year = "2003",

doi = "10.1002/pssc.200303355",

language = "English",

pages = "2253--2256",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Lin, Yu-Cheng

AU - Chuang, Wen-Kuei

AU - Chang, C. S.

AU - Sheu, Jinn-Kong

AU - Wen, T. C.

AU - Shei, S. C.

AU - Kuo, C. W.

AU - Fang, D. H.

PY - 2003

Y1 - 2003

N2 - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

AB - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

UR - http://www.scopus.com/inward/record.url?scp=20044381725&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20044381725&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303355

DO - 10.1002/pssc.200303355

M3 - Conference article

AN - SCOPUS:20044381725

SN - 1610-1634

SP - 2253

EP - 2256

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Abstract

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