MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Wen-Kuei Chuang, C. S. Chang, Jinn-Kong Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

Original languageEnglish
Pages (from-to)2253-2256
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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