MOCVD growth of InN on Si(111) with various buffer layers

C. C. Huang; R. W. Chuang; S. J. Chang; J. C. Lin; Y. C. Cheng; W. J. Lin

doi:10.1007/s11664-008-0475-7

MOCVD growth of InN on Si(111) with various buffer layers

C. C. Huang, R. W. Chuang, S. J. Chang, J. C. Lin, Y. C. Cheng, W. J. Lin

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al _x Ga _1-x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm ²/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

Original language	English
Pages (from-to)	1054-1057
Number of pages	4
Journal	Journal of Electronic Materials
Volume	37
Issue number	8
DOIs	https://doi.org/10.1007/s11664-008-0475-7
Publication status	Published - 2008 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-008-0475-7

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title = "MOCVD growth of InN on Si(111) with various buffer layers",

abstract = "We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm 2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.",

author = "Huang, {C. C.} and Chuang, {R. W.} and Chang, {S. J.} and Lin, {J. C.} and Cheng, {Y. C.} and Lin, {W. J.}",

note = "Funding Information: The authors wish to thank the Minister of Economic Affair (MOEA) supported by MOEA Grants No. 96-EC-17-A-08-R7-0769.",

year = "2008",

month = aug,

doi = "10.1007/s11664-008-0475-7",

language = "English",

volume = "37",

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journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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TY - JOUR

T1 - MOCVD growth of InN on Si(111) with various buffer layers

AU - Huang, C. C.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Lin, J. C.

AU - Cheng, Y. C.

AU - Lin, W. J.

N1 - Funding Information: The authors wish to thank the Minister of Economic Affair (MOEA) supported by MOEA Grants No. 96-EC-17-A-08-R7-0769.

PY - 2008/8

Y1 - 2008/8

N2 - We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm 2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

AB - We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm 2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

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U2 - 10.1007/s11664-008-0475-7

DO - 10.1007/s11664-008-0475-7

M3 - Article

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SN - 0361-5235

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SP - 1054

EP - 1057

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

MOCVD growth of InN on Si(111) with various buffer layers

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