MOCVD growth of InN on Si(111) with various buffer layers

C. C. Huang, R. W. Chuang, S. J. Chang, J. C. Lin, Y. C. Cheng, W. J. Lin

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm 2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

Original languageEnglish
Pages (from-to)1054-1057
Number of pages4
JournalJournal of Electronic Materials
Volume37
Issue number8
DOIs
Publication statusPublished - 2008 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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