We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm 2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry