Abstract
The need for meeting the expectations of continuing the enhancement of CMOS performance and density has inspired the introduction of new materials into the classical single-gate bulk MOSFET and the development of nonclassical multigate transistors at an accelerated rate. There is a strong need to understand and model the associated new physics and electrical behavior to ensure widespread very-large-scale-integration circuit applications of new technologies. This paper presents some of the efforts toward the modeling of new technologies for bulk MOSFETs and multigate transistors. A holistic model for mobility enhancement through process-induced stress and a dynamic behavior model for high-k transistors have been developed to capture some of the new effects and new materials in the bulk MOSFET. A new analytical model is also presented for the fundamentally new device structure - FinFET.
Original language | English |
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Pages (from-to) | 1971-1977 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 53 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2006 Sept |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering