Modeling and characterization of electromigration failures under bidirectional current stress

Jiang Tao, Jone-Fang Chen, Nathan W. Cheung, Chenming Hu

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Electromigration reliability of different metallization systems (Al-2%Si, Al-Cu/TiW, Cu, and TiN/Al-2%Si/TiN) and structures (Al-via and W-plug) under bidirectional current stress has been studied in a wide frequency range (from mHz to 200 MHz). The experimental results show that at low frequency, the damage healing factor and lifetime under ac stress increases with frequency. At very high-frequency regions, the pure ac lifetime was found to be determined by the thermal process (caused by asymmetrical geometry, etc.) instead of electromigration. All the observations are in agreement with an average current model.

Original languageEnglish
Pages (from-to)800-808
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume43
Issue number5
DOIs
Publication statusPublished - 1996 Dec 1

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Electromigration
Metallizing
Geometry
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Modeling and characterization of electromigration failures under bidirectional current stress. / Tao, Jiang; Chen, Jone-Fang; Cheung, Nathan W.; Hu, Chenming.

In: IEEE Transactions on Electron Devices, Vol. 43, No. 5, 01.12.1996, p. 800-808.

Research output: Contribution to journalArticle

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