In this work, the excimer-laser-induced crystallization of amorphous silicon (a-Si) films was investigated numerically and experimentally. The basic structure is a silicon film on a glass substrate. Besides, the effect of an SiO2 buffer layer located between them was also studied. In the microstructure analysis of the laser-irradiated area, the critical fluences (full-melt threshold, Fc) between the partial-melting and complete-melting regimes can be found from the grain size distribution varying with laser intensity. An efficient two-dimensional numerical model was developed to predict the critical fluences (Fc) and the transient distribution of temperature during the laser heating of a-Si films. The Fc's obtained from the simulation results of the proposed model agree fairly well with those from the experimental ones reported in the literature and acquired in this research.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry