Modeling and simulating the electrical properties of heterostructure-emitter bipolar transistors

Wen-Chau Liu, Wen Shiung Lour, Der Feung Guo, Chung Yih Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We develop a theoretical model related to minority carrier properties to study the current gains of heterostructure-emitter bipolar transistors (HEBTs) which use an AlGaAs layer only for minority carrier confinement to eliminate the problems associated with a conventional single heterojunction bipolar transistor (HBT). In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers" was also taken into account. Current gains of 55 and 180 which are in agreement with calculated data were experimentally obtained for HEBTs with Al0.3Ga0.7As and Al0.5Ga0.5As confinement layers, respectively. With the reduction of the base width to 0.1 μm, a current gain of around 1000 was expected.

Original languageEnglish
Title of host publicationSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages69-70
Number of pages2
ISBN (Electronic)0780312252, 9780780312258
DOIs
Publication statusPublished - 1993 Jan 1
Event1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
Duration: 1993 Mar 61993 Mar 7

Publication series

NameSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
Country/TerritoryTaiwan
CityTaipei
Period93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

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