Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications

This article presents a modified compact model of resistive random access memory (RRAM) with a tunneling barrier. The bilayer modulated RRAM can be integrated into a higher density array, reducing leakage current in standby mode. The model demonstrates current transition behavior from low- to high-bias regions by considering both bulk-limited and electrode-limited transport mechanisms. This model can evaluate RRAM array performance under various pulsing conditions and device parameter variations with calibrated model cards. The compute-in-memory application requires precise current sum results hindered by the wire resistance loading effect. This study also evaluates various sizes of arrays suitable for performance improvement.