Modeling of facet growth on patterned Si substrate in gas source MBE

Shaozhong Li, Qi Xiang, Dawen Wang, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

A theoretical model of facet formation on patterned substrate is developed for gas source Si-based MBE. In the model, the facet formation and competition processes are simulated by taking into account the effect of the surface migration and total free energy. The simulation shows that the surface migration process plays a very important role for the facet formation and competition during the growth. The results explain well our experimental observations.

Original languageEnglish
Pages (from-to)185-189
Number of pages5
JournalJournal of Crystal Growth
Volume157
Issue number1-4
DOIs
Publication statusPublished - 1995 Dec 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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