A theoretical model of facet formation on patterned substrate is developed for gas source Si-based MBE. In the model, the facet formation and competition processes are simulated by taking into account the effect of the surface migration and total free energy. The simulation shows that the surface migration process plays a very important role for the facet formation and competition during the growth. The results explain well our experimental observations.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry