Modeling of facet growth on patterned Si substrate in gas source MBE

Shaozhong Li; Qi Xiang; Dawen Wang; Kang L. Wang

doi:10.1016/0022-0248(95)00406-8

Modeling of facet growth on patterned Si substrate in gas source MBE

Shaozhong Li
, Qi Xiang
, Dawen Wang
, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A theoretical model of facet formation on patterned substrate is developed for gas source Si-based MBE. In the model, the facet formation and competition processes are simulated by taking into account the effect of the surface migration and total free energy. The simulation shows that the surface migration process plays a very important role for the facet formation and competition during the growth. The results explain well our experimental observations.

Original language	English
Pages (from-to)	185-189
Number of pages	5
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00406-8
Publication status	Published - 1995 Dec 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00406-8

Cite this

@article{267df7b713204863a80025a70386255c,

title = "Modeling of facet growth on patterned Si substrate in gas source MBE",

abstract = "A theoretical model of facet formation on patterned substrate is developed for gas source Si-based MBE. In the model, the facet formation and competition processes are simulated by taking into account the effect of the surface migration and total free energy. The simulation shows that the surface migration process plays a very important role for the facet formation and competition during the growth. The results explain well our experimental observations.",

author = "Shaozhong Li and Qi Xiang and Dawen Wang and Wang, \{Kang L.\}",

year = "1995",

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AU - Li, Shaozhong

AU - Xiang, Qi

AU - Wang, Dawen

AU - Wang, Kang L.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - A theoretical model of facet formation on patterned substrate is developed for gas source Si-based MBE. In the model, the facet formation and competition processes are simulated by taking into account the effect of the surface migration and total free energy. The simulation shows that the surface migration process plays a very important role for the facet formation and competition during the growth. The results explain well our experimental observations.

AB - A theoretical model of facet formation on patterned substrate is developed for gas source Si-based MBE. In the model, the facet formation and competition processes are simulated by taking into account the effect of the surface migration and total free energy. The simulation shows that the surface migration process plays a very important role for the facet formation and competition during the growth. The results explain well our experimental observations.

UR - https://www.scopus.com/pages/publications/0029633740

UR - https://www.scopus.com/pages/publications/0029633740#tab=citedBy

U2 - 10.1016/0022-0248(95)00406-8

DO - 10.1016/0022-0248(95)00406-8

M3 - Article

AN - SCOPUS:0029633740

SN - 0022-0248

VL - 157

SP - 185

EP - 189

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Modeling of facet growth on patterned Si substrate in gas source MBE

Abstract

All Science Journal Classification (ASJC) codes

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