Modeling of Inas/aisb/gasb structures and their valley current components

M. H. Liu; M. P. Houng; Y. H. Wang

doi:10.1109/SMS.1993.664572

Modeling of Inas/aisb/gasb structures and their valley current components

M. H. Liu, M. P. Houng, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.

Original language	English
Title of host publication	SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-94
Number of pages	2
ISBN (Electronic)	0780312252, 9780780312258
DOIs	https://doi.org/10.1109/SMS.1993.664572
Publication status	Published - 1993
Event	1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan Duration: 1993 Mar 6 → 1993 Mar 7

Publication series

Name	SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference	1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
Country/Territory	Taiwan
City	Taipei
Period	93-03-06 → 93-03-07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Modelling and Simulation

Access to Document

10.1109/SMS.1993.664572

Cite this

Liu, M. H., Houng, M. P., & Wang, Y. H. (1993). Modeling of Inas/aisb/gasb structures and their valley current components. In SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation (pp. 93-94). Article 664572 (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMS.1993.664572

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title = "Modeling of Inas/aisb/gasb structures and their valley current components",

abstract = "Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.",

author = "Liu, {M. H.} and Houng, {M. P.} and Wang, {Y. H.}",

note = "Publisher Copyright: {\textcopyright} 1993 IEEE.; 1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 ; Conference date: 06-03-1993 Through 07-03-1993",

year = "1993",

doi = "10.1109/SMS.1993.664572",

language = "English",

series = "SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "93--94",

booktitle = "SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation",

address = "United States",

}

Liu, MH, Houng, MP & Wang, YH 1993, Modeling of Inas/aisb/gasb structures and their valley current components. in SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation., 664572, SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation, Institute of Electrical and Electronics Engineers Inc., pp. 93-94, 1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993, Taipei, Taiwan, 93-03-06. https://doi.org/10.1109/SMS.1993.664572

Modeling of Inas/aisb/gasb structures and their valley current components. / Liu, M. H.; Houng, M. P.; Wang, Y. H.
SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation. Institute of Electrical and Electronics Engineers Inc., 1993. p. 93-94 664572 (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Liu, M. H.

AU - Houng, M. P.

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PY - 1993

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N2 - Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.

AB - Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.

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Liu MH, Houng MP, Wang YH. Modeling of Inas/aisb/gasb structures and their valley current components. In SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation. Institute of Electrical and Electronics Engineers Inc. 1993. p. 93-94. 664572. (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). doi: 10.1109/SMS.1993.664572

Modeling of Inas/aisb/gasb structures and their valley current components

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