Modeling of Inas/aisb/gasb structures and their valley current components

M. H. Liu, M. P. Houng, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.

Original languageEnglish
Title of host publicationSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-94
Number of pages2
ISBN (Electronic)0780312252, 9780780312258
DOIs
Publication statusPublished - 1993 Jan 1
Event1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
Duration: 1993 Mar 61993 Mar 7

Publication series

NameSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
CountryTaiwan
CityTaipei
Period93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

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