Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

T. K. Chiang, Y. H. Wang, M. P. Houng

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

Original languageEnglish
Pages (from-to)123-129
Number of pages7
JournalSolid-State Electronics
Volume43
Issue number1
DOIs
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's'. Together they form a unique fingerprint.

Cite this