Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

T. K. Chiang; Y. H. Wang; M. P. Houng

doi:10.1016/S0038-1101(98)00240-8

Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

T. K. Chiang, Y. H. Wang, M. P. Houng

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

Original language	English
Pages (from-to)	123-129
Number of pages	7
Journal	Solid-State Electronics
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(98)00240-8
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(98)00240-8

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@article{24b4d331925b4d879e876928fe92e374,

title = "Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's",

abstract = "Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.",

author = "Chiang, {T. K.} and Wang, {Y. H.} and Houng, {M. P.}",

note = "Funding Information: This work was supported in part by the National Science Council under contact NSC87-2215-E006-002.",

year = "1999",

doi = "10.1016/S0038-1101(98)00240-8",

language = "English",

volume = "43",

pages = "123--129",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

AU - Chiang, T. K.

AU - Wang, Y. H.

AU - Houng, M. P.

N1 - Funding Information: This work was supported in part by the National Science Council under contact NSC87-2215-E006-002.

PY - 1999

Y1 - 1999

N2 - Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

AB - Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

UR - http://www.scopus.com/inward/record.url?scp=0000888066&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000888066&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00240-8

DO - 10.1016/S0038-1101(98)00240-8

M3 - Article

AN - SCOPUS:0000888066

SN - 0038-1101

VL - 43

SP - 123

EP - 129

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

Abstract

All Science Journal Classification (ASJC) codes

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