Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

Original languageEnglish
Pages (from-to)123-129
Number of pages7
JournalSolid-State Electronics
Volume43
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

SOI (semiconductors)
Threshold voltage
threshold voltage
field effect transistors
Poisson equation
Simulators
simulators

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.",
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Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's. / Chiang, T. K.; Wang, Yeong-Her; Houng, Mau-phon.

In: Solid-State Electronics, Vol. 43, No. 1, 01.01.1999, p. 123-129.

Research output: Contribution to journalArticle

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AB - Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

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