Modeling the dc performance of heterostructure-emitter bipolar transistor

Wen Shiung Lour; Wen Chau Liu; Der Feng Guo; Rong Chau Liu

doi:10.1143/JJAP.31.2388

Modeling the dc performance of heterostructure-emitter bipolar transistor

Wen Shiung Lour, Wen Chau Liu, Der Feng Guo, Rong Chau Liu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A theoretical model related to minority carrier properties was developed to study the DC performance of a heterostructure-emitter bipolar transistor (HEBT) which uses an AlGaAs/GaAs heterojunction only for minority carrier confinement and causes improved emitter electron injection efficiency. In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers was also taken into account. On the other hand, current gains of 55 and 180 were achieved experimentally for an HEBT with Al_0.3Ga_0.7As and Al_0.5Ga_0.5As confinement layers, respectively. It is found that the calculated data were agree with the experimental results. With the reduction of the base width to 0.1 µm, a common-emitter current gain of around 1000 with small offset voltage was confirmed. These results reveal that the HEBT exhibits the feature of simplicity and excellent DC performance.

Original language	English
Pages (from-to)	2388-2393
Number of pages	6
Journal	Japanese journal of applied physics
Volume	31
Issue number	8 R
DOIs	https://doi.org/10.1143/JJAP.31.2388
Publication status	Published - 1992 Aug

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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abstract = "A theoretical model related to minority carrier properties was developed to study the DC performance of a heterostructure-emitter bipolar transistor (HEBT) which uses an AlGaAs/GaAs heterojunction only for minority carrier confinement and causes improved emitter electron injection efficiency. In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers was also taken into account. On the other hand, current gains of 55 and 180 were achieved experimentally for an HEBT with Al0.3Ga0.7As and Al0.5Ga0.5As confinement layers, respectively. It is found that the calculated data were agree with the experimental results. With the reduction of the base width to 0.1 µm, a common-emitter current gain of around 1000 with small offset voltage was confirmed. These results reveal that the HEBT exhibits the feature of simplicity and excellent DC performance.",

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AU - Lour, Wen Shiung

AU - Liu, Wen Chau

AU - Guo, Der Feng

AU - Liu, Rong Chau

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N2 - A theoretical model related to minority carrier properties was developed to study the DC performance of a heterostructure-emitter bipolar transistor (HEBT) which uses an AlGaAs/GaAs heterojunction only for minority carrier confinement and causes improved emitter electron injection efficiency. In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers was also taken into account. On the other hand, current gains of 55 and 180 were achieved experimentally for an HEBT with Al0.3Ga0.7As and Al0.5Ga0.5As confinement layers, respectively. It is found that the calculated data were agree with the experimental results. With the reduction of the base width to 0.1 µm, a common-emitter current gain of around 1000 with small offset voltage was confirmed. These results reveal that the HEBT exhibits the feature of simplicity and excellent DC performance.

AB - A theoretical model related to minority carrier properties was developed to study the DC performance of a heterostructure-emitter bipolar transistor (HEBT) which uses an AlGaAs/GaAs heterojunction only for minority carrier confinement and causes improved emitter electron injection efficiency. In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers was also taken into account. On the other hand, current gains of 55 and 180 were achieved experimentally for an HEBT with Al0.3Ga0.7As and Al0.5Ga0.5As confinement layers, respectively. It is found that the calculated data were agree with the experimental results. With the reduction of the base width to 0.1 µm, a common-emitter current gain of around 1000 with small offset voltage was confirmed. These results reveal that the HEBT exhibits the feature of simplicity and excellent DC performance.

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Modeling the dc performance of heterostructure-emitter bipolar transistor

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