Modification of DLC films for MEMS applications

Franklin Chau Nan Hong, Yoou Bin Guo, Jiun Yau Wang

Research output: Contribution to journalConference articlepeer-review


SiOx-containing DLC films are deposited by plasma enhanced chemical vapor deposition on Si substrate. The effect of SiOx dopants on the stress, adhesion and hydrophobicity of the DLC films are studied. The incorporation of SiOx in the DLC films deposited by using hexamethyldisiloxane (HMDSO) and CH4 mixture reduces the residual stress as well as enhances adhesion of the film on the substrate. Besides, the thermal stability of the film also improves. The incorporation of SiOx in the DLC film, as deposited by using HMDSO/CH4 mixture, can raise the water contact angle from 95°, as for the pure DLC film, to 110°. IR results show that the increase of contact angle is mainly due to the incorporation of a higher concentration of -CH3 group in the HMDSO-deposited films. By adding O2 with HMDSO, the contact angle of the deposited film can be reduced to 27°, showing hydrophilic property. By enhancing the surface roughness, the water contact angle can be further increased to 145° for the hydrophobic films deposited using HMDSO/CH4, and the water contact angle can be further reduced to 3° for the hydrophilic films deposited using HMDSO/O2.

Original languageEnglish
Pages (from-to)133-141
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 Materials and Device Characterization in Micromachinig II - Santa Clara, CA, USA
Duration: 1999 Sept 201999 Sept 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Modification of DLC films for MEMS applications'. Together they form a unique fingerprint.

Cite this