Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

Jeng Ting Li; Ho Lin Tsai; Wei Yao Lai; Weng Sing Hwang; In Gann Chen; Jen Sue Chen

doi:10.1063/1.5010156

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO₂ area ratio

Jeng Ting Li, Ho Lin Tsai, Wei Yao Lai, Weng Sing Hwang, In Gann Chen, Jen Sue Chen

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO₂ dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO₂ area ratio. The ZTO/SiO₂ area ratio modulates the ZTO-SiO₂ interface dipole strength as well as the ZTO-SiO₂ conduction band offset and subsequently affects the FN tunneling current through the SiO₂ layer, which provides a route that modifies the gate-leakage current.

Original language	English
Article number	183502
Journal	Applied Physics Letters
Volume	112
Issue number	18
DOIs	https://doi.org/10.1063/1.5010156
Publication status	Published - 2018 Apr 30

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.5010156

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title = "Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio",

abstract = "This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.",

author = "Li, {Jeng Ting} and Tsai, {Ho Lin} and Lai, {Wei Yao} and Hwang, {Weng Sing} and Chen, {In Gann} and Chen, {Jen Sue}",

note = "Funding Information: The authors gratefully acknowledge the financial support from the Ministry of Science and Technology of Taiwan (Grant Nos. MOST 106-2221-E-006-062-MY3, MOST 106-2221-E-006-063-MY3, and MOST 106-2119-M-006-007). Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

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doi = "10.1063/1.5010156",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

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T1 - Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

AU - Li, Jeng Ting

AU - Tsai, Ho Lin

AU - Lai, Wei Yao

AU - Hwang, Weng Sing

AU - Chen, In Gann

AU - Chen, Jen Sue

N1 - Funding Information: The authors gratefully acknowledge the financial support from the Ministry of Science and Technology of Taiwan (Grant Nos. MOST 106-2221-E-006-062-MY3, MOST 106-2221-E-006-063-MY3, and MOST 106-2119-M-006-007). Publisher Copyright: © 2018 Author(s).

PY - 2018/4/30

Y1 - 2018/4/30

N2 - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

AB - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

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Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO₂ area ratio

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