Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

Jeng Ting Li; Ho Lin Tsai; Wei Yao Lai; Weng Sing Hwang; In Gann Chen; Jen Sue Chen

doi:10.1063/1.5010156

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO₂ area ratio

Jeng Ting Li, Ho Lin Tsai, Wei Yao Lai, Weng Sing Hwang, In Gann Chen, Jen Sue Chen

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO₂ dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO₂ area ratio. The ZTO/SiO₂ area ratio modulates the ZTO-SiO₂ interface dipole strength as well as the ZTO-SiO₂ conduction band offset and subsequently affects the FN tunneling current through the SiO₂ layer, which provides a route that modifies the gate-leakage current.

Original language	English
Article number	183502
Journal	Applied Physics Letters
Volume	112
Issue number	18
DOIs	https://doi.org/10.1063/1.5010156
Publication status	Published - 2018 Apr 30

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.5010156

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title = "Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio",

abstract = "This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.",

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T1 - Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

AU - Li, Jeng Ting

AU - Tsai, Ho Lin

AU - Lai, Wei Yao

AU - Hwang, Weng Sing

AU - Chen, In Gann

AU - Chen, Jen Sue

PY - 2018/4/30

Y1 - 2018/4/30

N2 - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

AB - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

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