Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

Jeng Ting Li, Ho Lin Tsai, Wei Yao Lai, Weng Sing Hwang, In-Gann Chen, Jen-Sue Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

Original languageEnglish
Article number183502
JournalApplied Physics Letters
Volume112
Issue number18
DOIs
Publication statusPublished - 2018 Apr 30

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zinc oxides
tin oxides
leakage
conduction bands
transistors
routes
dipoles
thin films
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio",
abstract = "This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.",
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Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio. / Li, Jeng Ting; Tsai, Ho Lin; Lai, Wei Yao; Hwang, Weng Sing; Chen, In-Gann; Chen, Jen-Sue.

In: Applied Physics Letters, Vol. 112, No. 18, 183502, 30.04.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

AU - Li, Jeng Ting

AU - Tsai, Ho Lin

AU - Lai, Wei Yao

AU - Hwang, Weng Sing

AU - Chen, In-Gann

AU - Chen, Jen-Sue

PY - 2018/4/30

Y1 - 2018/4/30

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AB - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

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