Abstract
This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.
| Original language | English |
|---|---|
| Article number | 183502 |
| Journal | Applied Physics Letters |
| Volume | 112 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2018 Apr 30 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio. / Li, Jeng Ting; Tsai, Ho Lin; Lai, Wei Yao; Hwang, Weng Sing; Chen, In-Gann; Chen, Jen-Sue.
In: Applied Physics Letters, Vol. 112, No. 18, 183502, 30.04.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio
AU - Li, Jeng Ting
AU - Tsai, Ho Lin
AU - Lai, Wei Yao
AU - Hwang, Weng Sing
AU - Chen, In-Gann
AU - Chen, Jen-Sue
PY - 2018/4/30
Y1 - 2018/4/30
N2 - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.
AB - This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.
UR - http://www.scopus.com/inward/record.url?scp=85046469874&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85046469874&partnerID=8YFLogxK
U2 - 10.1063/1.5010156
DO - 10.1063/1.5010156
M3 - Article
VL - 112
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 183502
ER -