Abstract
This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.
Original language | English |
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Article number | 183502 |
Journal | Applied Physics Letters |
Volume | 112 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2018 Apr 30 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)