Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

N. C. Chen; P. H. Chang; A. P. Chiu; M. C. Wang; W. S. Feng; G. M. Wu; C. F. Shih; K. S. Liu

doi:10.1063/1.1704855

Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

N. C. Chen, P. H. Chang, A. P. Chiu, M. C. Wang, W. S. Feng, G. M. Wu, C. F. Shih, K. S. Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

Original language	English
Pages (from-to)	2584-2586
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1704855
Publication status	Published - 2004 Apr 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1704855

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title = "Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN",

abstract = "A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.",

author = "Chen, {N. C.} and Chang, {P. H.} and Chiu, {A. P.} and Wang, {M. C.} and Feng, {W. S.} and Wu, {G. M.} and Shih, {C. F.} and Liu, {K. S.}",

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T1 - Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

AU - Chen, N. C.

AU - Chang, P. H.

AU - Chiu, A. P.

AU - Wang, M. C.

AU - Feng, W. S.

AU - Wu, G. M.

AU - Shih, C. F.

AU - Liu, K. S.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

AB - A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

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JF - Applied Physics Letters

SN - 0003-6951

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Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

Abstract

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