Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

N. C. Chen, P. H. Chang, A. P. Chiu, M. C. Wang, W. S. Feng, G. M. Wu, C. F. Shih, K. S. Liu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

Original languageEnglish
Pages (from-to)2584-2586
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
Publication statusPublished - 2004 Apr 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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