TY - GEN
T1 - Modulation of interfacial properties for low voltage-driven organic thin-film transistors
AU - Peng, Sheng Kuang
AU - Fang, Po Hsiang
AU - Kuo, Peng Lin
AU - Cheng, Horng Long
AU - Tang, Fu Ching
AU - Chou, Wei Yang
PY - 2019/7
Y1 - 2019/7
N2 - Organic thin-film transistor (OTFT) devices with polyimide (PI) layers of various solid contents were fabricated. In OTFT devices, the factor of interface between modification and active layers exhibits profound correlation with electrical stability of devices. To improve the performance of stability of OTFTs during long-term operation, effective interface engineering needs to be utilized. Herein, this study demonstrated the relevance about interface properties and microstructures of N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13H27) grown the PI layers of various solid content. Moreover, the microstructure of PTCDI-C13H27 affects the trap state in the channel, leading to the enhancement of electrical stability of the devices. Consequently, we further adopted an appropriate solid content of PI with smooth surface and lower trap state to fabricate low voltage-driven organic devices.
AB - Organic thin-film transistor (OTFT) devices with polyimide (PI) layers of various solid contents were fabricated. In OTFT devices, the factor of interface between modification and active layers exhibits profound correlation with electrical stability of devices. To improve the performance of stability of OTFTs during long-term operation, effective interface engineering needs to be utilized. Herein, this study demonstrated the relevance about interface properties and microstructures of N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13H27) grown the PI layers of various solid content. Moreover, the microstructure of PTCDI-C13H27 affects the trap state in the channel, leading to the enhancement of electrical stability of the devices. Consequently, we further adopted an appropriate solid content of PI with smooth surface and lower trap state to fabricate low voltage-driven organic devices.
UR - http://www.scopus.com/inward/record.url?scp=85073262615&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073262615&partnerID=8YFLogxK
U2 - 10.23919/AM-FPD.2019.8830630
DO - 10.23919/AM-FPD.2019.8830630
M3 - Conference contribution
T3 - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Y2 - 2 July 2019 through 5 July 2019
ER -