Modulation of Ni valence in p-type NiO films via substitution of Ni by Cu

Wei Yu Chen, Jiann Shing Jeng, Kuo Lun Huang, Jen-Sue Chen

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

10 and 18 at. % copper incorporated NiO films were deposited by reactively sputtering from Ni targets covered with Cu strips of different sizes. A change in the valence of Ni from Ni 2+ to Ni 3+ is found by x-ray absorption near edge structure analysis after incorporating Cu into the films. All NiO films exhibit p-type conductivity, either without or with Cu additives. However, as compared with the pure NiO films, the carrier concentration of the films incorporating Cu increases, while the resistivity and mobility decrease. This study not only discusses the connections among the physical properties of the NiO films with different Cu contents but also clarifies the role of Cu additives in the NiO films.

Original languageEnglish
Article number021501
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume31
Issue number2
DOIs
Publication statusPublished - 2013 Mar 1

Fingerprint

Substitution reactions
Modulation
substitutes
valence
modulation
x ray absorption
Carrier concentration
Sputtering
Copper
strip
Physical properties
physical properties
sputtering
X rays
copper
conductivity
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Modulation of Ni valence in p-type NiO films via substitution of Ni by Cu",
abstract = "10 and 18 at. {\%} copper incorporated NiO films were deposited by reactively sputtering from Ni targets covered with Cu strips of different sizes. A change in the valence of Ni from Ni 2+ to Ni 3+ is found by x-ray absorption near edge structure analysis after incorporating Cu into the films. All NiO films exhibit p-type conductivity, either without or with Cu additives. However, as compared with the pure NiO films, the carrier concentration of the films incorporating Cu increases, while the resistivity and mobility decrease. This study not only discusses the connections among the physical properties of the NiO films with different Cu contents but also clarifies the role of Cu additives in the NiO films.",
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Modulation of Ni valence in p-type NiO films via substitution of Ni by Cu. / Chen, Wei Yu; Jeng, Jiann Shing; Huang, Kuo Lun; Chen, Jen-Sue.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 31, No. 2, 021501, 01.03.2013.

Research output: Contribution to journalArticle

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AB - 10 and 18 at. % copper incorporated NiO films were deposited by reactively sputtering from Ni targets covered with Cu strips of different sizes. A change in the valence of Ni from Ni 2+ to Ni 3+ is found by x-ray absorption near edge structure analysis after incorporating Cu into the films. All NiO films exhibit p-type conductivity, either without or with Cu additives. However, as compared with the pure NiO films, the carrier concentration of the films incorporating Cu increases, while the resistivity and mobility decrease. This study not only discusses the connections among the physical properties of the NiO films with different Cu contents but also clarifies the role of Cu additives in the NiO films.

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