Modulation-speed enhancement of a GaN based green light-emitting-diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) Communication

H. Y. Huang, J. W. Shi, Y. S. Wu, J. I. Chyi, Jinn-Kong Sheu, Wei-Chi Lai, G. R. Lin, Ci Ling Pan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a high-speed green GaN Light-Emitting-Diode for plastic optical fiber communication. By use of n-type doping in barrier layers, superior performance of modulation-speed and output-power to undoped control has been observed.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 26

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period06-05-2106-05-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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    Huang, H. Y., Shi, J. W., Wu, Y. S., Chyi, J. I., Sheu, J-K., Lai, W-C., Lin, G. R., & Pan, C. L. (2006). Modulation-speed enhancement of a GaN based green light-emitting-diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) Communication. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4628795] https://doi.org/10.1109/CLEO.2006.4628795