Modulation-speed enhancement of a GaN based green light-emitting-diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) Communication

H. Y. Huang, J. W. Shi, Y. S. Wu, J. I. Chyi, J. K. Sheu, W. C. Lai, G. R. Lin, Ci Ling Pan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a high-speed green GaN Light-Emitting-Diode for plastic optical fiber communication. By use of n-type doping in barrier layers, superior performance of modulation-speed and output-power to undoped control has been observed.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
Publication statusPublished - 2006 Jan 1
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 21

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2006
CountryUnited States
CityLong Beach, CA
Period06-05-2106-05-21

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Modulation-speed enhancement of a GaN based green light-emitting-diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) Communication'. Together they form a unique fingerprint.

Cite this