Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

Y. L. Cheng, Y. L. Wang, Y. L. Wu, Chuan-Pu Liu, C. W. Liu, J. K. Lan, M. L. O'Neil, Chyung Ay, M. S. Feng

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.

Original languageEnglish
Pages (from-to)681-687
Number of pages7
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

moisture resistance
Siloxanes
Fluorine
siloxanes
fluorine
Thermodynamic stability
Permittivity
thermal stability
Moisture
permittivity
silica glass
Fused silica
Integrated circuit manufacture
blankets
Plasma enhanced chemical vapor deposition
Leakage currents
integrated circuits
leakage
vapor deposition
wafers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Cheng, Y. L. ; Wang, Y. L. ; Wu, Y. L. ; Liu, Chuan-Pu ; Liu, C. W. ; Lan, J. K. ; O'Neil, M. L. ; Ay, Chyung ; Feng, M. S. / Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 681-687.
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abstract = "The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.",
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Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material. / Cheng, Y. L.; Wang, Y. L.; Wu, Y. L.; Liu, Chuan-Pu; Liu, C. W.; Lan, J. K.; O'Neil, M. L.; Ay, Chyung; Feng, M. S.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 681-687.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

AU - Cheng, Y. L.

AU - Wang, Y. L.

AU - Wu, Y. L.

AU - Liu, Chuan-Pu

AU - Liu, C. W.

AU - Lan, J. K.

AU - O'Neil, M. L.

AU - Ay, Chyung

AU - Feng, M. S.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.

AB - The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.

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