This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)