TY - JOUR
T1 - Molecular beam epitaxy grown gaas bipolar unipolar transition negative differential resistance power transistor
AU - Yarn, Kao Feng
AU - Wang, Yeong Her
AU - Wang, Ruey Lue
AU - Chang, Chun Yen
PY - 1990/12
Y1 - 1990/12
N2 - This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.
AB - This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.
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U2 - 10.1143/JJAP.29.L2411
DO - 10.1143/JJAP.29.L2411
M3 - Article
AN - SCOPUS:84956223828
VL - 29
SP - 2411
EP - 2413
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 12
ER -