Molecular beam epitaxy grown gaas bipolar unipolar transition negative differential resistance power transistor

Kao Feng Yarn, Yeong Her Wang, Ruey Lue Wang, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.

Original languageEnglish
Pages (from-to)2411-2413
Number of pages3
JournalJapanese Journal of Applied Physics
Volume29
Issue number12
DOIs
Publication statusPublished - 1990 Dec

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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