Molecular beam epitaxy grown gaas bipolar unipolar transition negative differential resistance power transistor

Kao Feng Yarn; Yeong Her Wang; Ruey Lue Wang; Chun Yen Chang

doi:10.1143/JJAP.29.L2411

Molecular beam epitaxy grown gaas bipolar unipolar transition negative differential resistance power transistor

Kao Feng Yarn, Yeong Her Wang, Ruey Lue Wang, Chun Yen Chang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.

Original language	English
Pages (from-to)	2411-2413
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.29.L2411
Publication status	Published - 1990 Dec

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{dba73f6ffabc4e1bbff88015dd4e97c4,

title = "Molecular beam epitaxy grown gaas bipolar unipolar transition negative differential resistance power transistor",

abstract = "This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.",

author = "Yarn, {Kao Feng} and Wang, {Yeong Her} and Wang, {Ruey Lue} and Chang, {Chun Yen}",

year = "1990",

month = dec,

doi = "10.1143/JJAP.29.L2411",

language = "English",

volume = "29",

pages = "2411--2413",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Molecular beam epitaxy grown gaas bipolar unipolar transition negative differential resistance power transistor

AU - Yarn, Kao Feng

AU - Wang, Yeong Her

AU - Wang, Ruey Lue

AU - Chang, Chun Yen

PY - 1990/12

Y1 - 1990/12

N2 - This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.

AB - This letter describes a power OaAs bipolar-unipolar transition negative differential resistance transistor (BUN DR) using structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.

UR - http://www.scopus.com/inward/record.url?scp=84956223828&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956223828&partnerID=8YFLogxK

U2 - 10.1143/JJAP.29.L2411

DO - 10.1143/JJAP.29.L2411

M3 - Article

AN - SCOPUS:84956223828

VL - 29

SP - 2411

EP - 2413

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -