Molecular beam epitaxy growth of algaas/gaas vertical cavity surface emitting lasers and the performance of pin photodetector/vertical cavity surface emitting laser integrated structures

Y. H. Wang, G. Hasnain, K. Tai, J. D. Wynn, B. E. Weir, K. D. Choquette, A. Y. Cho

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0 2Ga0, 8As (100/80 A) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two A1 cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Original languageEnglish
Pages (from-to)3883-3886
Number of pages4
JournalJapanese Journal of Applied Physics
Volume30
Issue number12
DOIs
Publication statusPublished - 1991 Dec

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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