Molecular dynamics simulation for nanoscale deep indentation of a copper substrate by single-walled carbon nanotube tips

Jin Yuan Hsieh, Lin S. Huang, Chuan Chen, Hsu Cheng Lo, Chi Chuan Hwang

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5 Citations (Scopus)

Abstract

Deep nanoindentation of a copper substrate by single-walled carbon nanotubes (SWCNTs) has been analyzed using molecular dynamics simulations. Three categories of SWCNTs and their relationship with temperature and nanotube length have been extensively investigated. The results of this comprehensive quantitative analysis for deep indentation demonstrate that only SWCNTs with relatively short lengths can indent into a substrate up to a desired depth without buckling. Most notably, a permanent hollow hole with a high aspect ratio will be produced on the copper substrate, while copper atoms in close proximity to the hole are only slightly disordered.

Original languageEnglish
Article number415701
JournalNanotechnology
Volume18
Issue number41
DOIs
Publication statusPublished - 2007 Oct 17

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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