Abstract
An investigation of copper reflow in the damascene process using molecular dynamics simulation is presented. A simulation of the deposition process, with an investigation into the growing mechanism of the deposited atoms within the trench, is also included as well. The simulation results confirm the importance of the heating duration in achieving a successful reflow process in which the trench becomes completely filled by the deposited atoms.
Original language | English |
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Pages (from-to) | 1853-1865 |
Number of pages | 13 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2002 Sept |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering