Molecular dynamics simulation of sputter-deposited thin film: A review

Chi-Chuan Hwang, Jee Gong Chang, Shin Pon Ju

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper takes a brief review on the molecular dynamic simulation of sputter-deposited thin film. We first introduce the simulation model of sputter-deposited process in general. These include inter-atomic force model, which uses to characterize the interaction force acting between atoms, deposition model, which uses to distinguish what a specific sputter-deposited process wanted to simulate and finally, the boundary specification, which involves the controlling of the environment conditions. Then, six sections are followed to introduce our related researches on the sputter-deposited MD simulation. These include investigating the thin film growth by physical vapor deposition, ion cluster beam deposition, collimated magnetron sputter deposition, ion assisted deposition and ion physical vapor deposition. At the beginning of each research topic, former literatures are briefly reviewed. Then, several important results are drawn and summarized from our researches. Finally, in the last section, we point out the future challenges of the MD simulation on this sputter-deposited issue.

Original languageEnglish
Pages (from-to)309-336
Number of pages28
JournalJournal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao
Volume24
Issue number4
Publication statusPublished - 2003 Aug 1

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Molecular dynamics
Physical vapor deposition
Thin films
Computer simulation
Ions
Sputter deposition
Film growth
Specifications
Atoms

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering

Cite this

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