This paper takes a brief review on the molecular dynamic simulation of sputter-deposited thin film. We first introduce the simulation model of sputter-deposited process in general. These include inter-atomic force model, which uses to characterize the interaction force acting between atoms, deposition model, which uses to distinguish what a specific sputter-deposited process wanted to simulate and finally, the boundary specification, which involves the controlling of the environment conditions. Then, six sections are followed to introduce our related researches on the sputter-deposited MD simulation. These include investigating the thin film growth by physical vapor deposition, ion cluster beam deposition, collimated magnetron sputter deposition, ion assisted deposition and ion physical vapor deposition. At the beginning of each research topic, former literatures are briefly reviewed. Then, several important results are drawn and summarized from our researches. Finally, in the last section, we point out the future challenges of the MD simulation on this sputter-deposited issue.
|Number of pages||28|
|Journal||Journal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao|
|Publication status||Published - 2003 Aug 1|
All Science Journal Classification (ASJC) codes
- Mechanical Engineering