Molecular dynamics simulation of sputter trench-filling morphology in damascene process

Shin Pon Ju, Cheng I. Weng, Jee Gong Chang, Chi-Chuan Hwang

Research output: Contribution to journalConference article

17 Citations (Scopus)


The use of molecular dynamics simulation to study the influence of process parameters on sputter-trench-filling morphologies in the damascene process was presented. A three-dimensional model of the trench comprising of a Ti film and thermal control layer was developed. The interatomic forces existing between the atoms were simulated by tight-binding potential method. It was found that the trench filling patterns were influenced by the incident energy, and filling pattern changed to an ideal one at a higher incident energy.

Original languageEnglish
Pages (from-to)946-955
Number of pages10
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
Publication statusPublished - 2002 May 1
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: 2001 Oct 12001 Oct 3

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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