Molecular dynamics simulation of sputter trench-filling morphology in damascene process

Shin Pon Ju; Cheng I. Weng; Jee Gong Chang; Chi Chuan Hwang

doi:10.1116/1.1477423

Molecular dynamics simulation of sputter trench-filling morphology in damascene process

Shin Pon Ju
, Cheng I. Weng
, Jee Gong Chang
, Chi Chuan Hwang

Department of Engineering Science

Research output: Contribution to journal › Conference article › peer-review

20 Citations (Scopus)

Abstract

The use of molecular dynamics simulation to study the influence of process parameters on sputter-trench-filling morphologies in the damascene process was presented. A three-dimensional model of the trench comprising of a Ti film and thermal control layer was developed. The interatomic forces existing between the atoms were simulated by tight-binding potential method. It was found that the trench filling patterns were influenced by the incident energy, and filling pattern changed to an ideal one at a higher incident energy.

Original language	English
Pages (from-to)	946-955
Number of pages	10
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1477423
Publication status	Published - 2002 May
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 2001 Oct 1 → 2001 Oct 3

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1477423

Cite this

@article{d9dc84730e5444c39a1b79a5243db8c5,

title = "Molecular dynamics simulation of sputter trench-filling morphology in damascene process",

abstract = "The use of molecular dynamics simulation to study the influence of process parameters on sputter-trench-filling morphologies in the damascene process was presented. A three-dimensional model of the trench comprising of a Ti film and thermal control layer was developed. The interatomic forces existing between the atoms were simulated by tight-binding potential method. It was found that the trench filling patterns were influenced by the incident energy, and filling pattern changed to an ideal one at a higher incident energy.",

author = "Ju, \{Shin Pon\} and Weng, \{Cheng I.\} and Chang, \{Jee Gong\} and Hwang, \{Chi Chuan\}",

year = "2002",

month = may,

doi = "10.1116/1.1477423",

language = "English",

volume = "20",

pages = "946--955",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Molecular dynamics simulation of sputter trench-filling morphology in damascene process

AU - Ju, Shin Pon

AU - Weng, Cheng I.

AU - Chang, Jee Gong

AU - Hwang, Chi Chuan

PY - 2002/5

Y1 - 2002/5

N2 - The use of molecular dynamics simulation to study the influence of process parameters on sputter-trench-filling morphologies in the damascene process was presented. A three-dimensional model of the trench comprising of a Ti film and thermal control layer was developed. The interatomic forces existing between the atoms were simulated by tight-binding potential method. It was found that the trench filling patterns were influenced by the incident energy, and filling pattern changed to an ideal one at a higher incident energy.

AB - The use of molecular dynamics simulation to study the influence of process parameters on sputter-trench-filling morphologies in the damascene process was presented. A three-dimensional model of the trench comprising of a Ti film and thermal control layer was developed. The interatomic forces existing between the atoms were simulated by tight-binding potential method. It was found that the trench filling patterns were influenced by the incident energy, and filling pattern changed to an ideal one at a higher incident energy.

UR - https://www.scopus.com/pages/publications/0035998588

UR - https://www.scopus.com/pages/publications/0035998588#tab=citedBy

U2 - 10.1116/1.1477423

DO - 10.1116/1.1477423

M3 - Conference article

AN - SCOPUS:0035998588

SN - 1071-1023

VL - 20

SP - 946

EP - 955

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Molecular dynamics simulation of sputter trench-filling morphology in damascene process

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this