Arsenic ion (As+ 70 keV, 1.0 × 1015 cm -2) implanted p--Si(100) samples were annealed under intense cw light from a Xe arc lamp. The arc lamp discharge power was fixed at 20 kW, and annealing time was varied from 0.1 to 2.2 s. Photoluminescence (PL) spectra from all samples were measured at room temperature under three different excitation wavelengths (532, 650 and 827 nm) and correlated with sheet resistance, measured using a four point probe, and As SIMS depth profiles. PL spectra measurements under 650 and 827 nm excitations are very promising as a non-contact, implant anneal monitoring technique.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering