Monitoring implant anneal by non-contact room temperature photoluminescence

Min Hao Hong; Dung Ching Perng; Shiu Ko Jang Jian; Woo Sik Yoo

doi:10.1149/2.011205ssl

Monitoring implant anneal by non-contact room temperature photoluminescence

Min Hao Hong, Dung Ching Perng, Shiu Ko Jang Jian, Woo Sik Yoo

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Arsenic ion (As⁺ 70 keV, 1.0 × 10¹⁵ cm ^-2) implanted p^--Si(100) samples were annealed under intense cw light from a Xe arc lamp. The arc lamp discharge power was fixed at 20 kW, and annealing time was varied from 0.1 to 2.2 s. Photoluminescence (PL) spectra from all samples were measured at room temperature under three different excitation wavelengths (532, 650 and 827 nm) and correlated with sheet resistance, measured using a four point probe, and As SIMS depth profiles. PL spectra measurements under 650 and 827 nm excitations are very promising as a non-contact, implant anneal monitoring technique.

Original language	English
Pages (from-to)	P76-P78
Journal	ECS Solid State Letters
Volume	1
Issue number	5
DOIs	https://doi.org/10.1149/2.011205ssl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Monitoring implant anneal by non-contact room temperature photoluminescence",

abstract = "Arsenic ion (As+ 70 keV, 1.0 × 1015 cm -2) implanted p--Si(100) samples were annealed under intense cw light from a Xe arc lamp. The arc lamp discharge power was fixed at 20 kW, and annealing time was varied from 0.1 to 2.2 s. Photoluminescence (PL) spectra from all samples were measured at room temperature under three different excitation wavelengths (532, 650 and 827 nm) and correlated with sheet resistance, measured using a four point probe, and As SIMS depth profiles. PL spectra measurements under 650 and 827 nm excitations are very promising as a non-contact, implant anneal monitoring technique.",

author = "Hong, {Min Hao} and Perng, {Dung Ching} and Jian, {Shiu Ko Jang} and Yoo, {Woo Sik}",

year = "2012",

doi = "10.1149/2.011205ssl",

language = "English",

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journal = "ECS Solid State Letters",

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AU - Hong, Min Hao

AU - Perng, Dung Ching

AU - Jian, Shiu Ko Jang

AU - Yoo, Woo Sik

PY - 2012

Y1 - 2012

N2 - Arsenic ion (As+ 70 keV, 1.0 × 1015 cm -2) implanted p--Si(100) samples were annealed under intense cw light from a Xe arc lamp. The arc lamp discharge power was fixed at 20 kW, and annealing time was varied from 0.1 to 2.2 s. Photoluminescence (PL) spectra from all samples were measured at room temperature under three different excitation wavelengths (532, 650 and 827 nm) and correlated with sheet resistance, measured using a four point probe, and As SIMS depth profiles. PL spectra measurements under 650 and 827 nm excitations are very promising as a non-contact, implant anneal monitoring technique.

AB - Arsenic ion (As+ 70 keV, 1.0 × 1015 cm -2) implanted p--Si(100) samples were annealed under intense cw light from a Xe arc lamp. The arc lamp discharge power was fixed at 20 kW, and annealing time was varied from 0.1 to 2.2 s. Photoluminescence (PL) spectra from all samples were measured at room temperature under three different excitation wavelengths (532, 650 and 827 nm) and correlated with sheet resistance, measured using a four point probe, and As SIMS depth profiles. PL spectra measurements under 650 and 827 nm excitations are very promising as a non-contact, implant anneal monitoring technique.

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JO - ECS Solid State Letters

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Monitoring implant anneal by non-contact room temperature photoluminescence

Abstract

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