Monitoring implant anneal by non-contact room temperature photoluminescence

Min Hao Hong, Dung Ching Perng, Shiu Ko Jang Jian, Woo Sik Yoo

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Arsenic ion (As+ 70 keV, 1.0 × 1015 cm -2) implanted p--Si(100) samples were annealed under intense cw light from a Xe arc lamp. The arc lamp discharge power was fixed at 20 kW, and annealing time was varied from 0.1 to 2.2 s. Photoluminescence (PL) spectra from all samples were measured at room temperature under three different excitation wavelengths (532, 650 and 827 nm) and correlated with sheet resistance, measured using a four point probe, and As SIMS depth profiles. PL spectra measurements under 650 and 827 nm excitations are very promising as a non-contact, implant anneal monitoring technique.

Original languageEnglish
Pages (from-to)P76-P78
JournalECS Solid State Letters
Issue number5
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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