Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Ching Sung Lee, Wei Chou Hsu, Jun Chin Huang, Yeong Jia Chen, Hsin Hung Chen

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AIAs-In0.25Ga 0.75As-AIAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0.49Ga0.51 P-In0.25 Ga 0.75 As-GaAs δ-high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density (Jp) of 50.6 mA/mm, and a valley current density (Jv) of 52.7 μA/mm, respectively, with a transistor gate length of 1.0 μm. The maximum current drive density was observed to be 478 A/mm-cm2.

Original languageEnglish
Pages (from-to)50-52
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number2
DOIs
Publication statusPublished - 2005 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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