Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Ching Sung Lee; Wei Chou Hsu; Jun Chin Huang; Yeong Jia Chen; Hsin Hung Chen

doi:10.1109/LED.2004.841187

Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Ching Sung Lee, Wei Chou Hsu, Jun Chin Huang, Yeong Jia Chen, Hsin Hung Chen

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AIAs-In_0.25Ga _0.75As-AIAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In _0.49Ga_0.51 P-In_0.25 Ga _0.75 As-GaAs δ-high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density (J_p) of 50.6 mA/mm, and a valley current density (J_v) of 52.7 μA/mm, respectively, with a transistor gate length of 1.0 μm. The maximum current drive density was observed to be 478 A/mm-cm².

Original language	English
Pages (from-to)	50-52
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	2
DOIs	https://doi.org/10.1109/LED.2004.841187
Publication status	Published - 2005 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2004.841187

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@article{8029d2c397fc454397692b16936cc59d,

title = "Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K",

abstract = "This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AIAs-In0.25Ga 0.75As-AIAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0.49Ga0.51 P-In0.25 Ga 0.75 As-GaAs δ-high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density (Jp) of 50.6 mA/mm, and a valley current density (Jv) of 52.7 μA/mm, respectively, with a transistor gate length of 1.0 μm. The maximum current drive density was observed to be 478 A/mm-cm2.",

author = "Lee, {Ching Sung} and Hsu, {Wei Chou} and Huang, {Jun Chin} and Chen, {Yeong Jia} and Chen, {Hsin Hung}",

note = "Funding Information: Manuscript received September 13, 2004; revised November 11, 2004. This work was supported by the National Science Council, Taiwan, R.O.C., under Contract NSC 93-2215-E-035-005. The review of this letter was arranged by Editor D. Ritter.",

year = "2005",

month = feb,

doi = "10.1109/LED.2004.841187",

language = "English",

volume = "26",

pages = "50--52",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Huang, Jun Chin

AU - Chen, Yeong Jia

AU - Chen, Hsin Hung

N1 - Funding Information: Manuscript received September 13, 2004; revised November 11, 2004. This work was supported by the National Science Council, Taiwan, R.O.C., under Contract NSC 93-2215-E-035-005. The review of this letter was arranged by Editor D. Ritter.

PY - 2005/2

Y1 - 2005/2

N2 - This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AIAs-In0.25Ga 0.75As-AIAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0.49Ga0.51 P-In0.25 Ga 0.75 As-GaAs δ-high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density (Jp) of 50.6 mA/mm, and a valley current density (Jv) of 52.7 μA/mm, respectively, with a transistor gate length of 1.0 μm. The maximum current drive density was observed to be 478 A/mm-cm2.

AB - This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AIAs-In0.25Ga 0.75As-AIAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0.49Ga0.51 P-In0.25 Ga 0.75 As-GaAs δ-high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density (Jp) of 50.6 mA/mm, and a valley current density (Jv) of 52.7 μA/mm, respectively, with a transistor gate length of 1.0 μm. The maximum current drive density was observed to be 478 A/mm-cm2.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

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