This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AIAs-In0.25Ga 0.75As-AIAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0.49Ga0.51 P-In0.25 Ga 0.75 As-GaAs δ-high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density (Jp) of 50.6 mA/mm, and a valley current density (Jv) of 52.7 μA/mm, respectively, with a transistor gate length of 1.0 μm. The maximum current drive density was observed to be 478 A/mm-cm2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering