Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs

Ming Sheng Doong, Day Shan Liu, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We present a novel monolithic photoreceiver operating with a gain of 25 dB and a 3-dB bandwidth of above 2 GHz. In this photoreceiver, a high performance of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers was used. As well, a buffer logic invert circuit, feedback resistor and amplifier using the conventional MESFET's structure were designed to perform transimpedance amplifiers. The performances of the photoreceiver could be tuned through the feedback resistor.

Original languageEnglish
Pages (from-to)1235-1238
Number of pages4
JournalSolid-State Electronics
Volume44
Issue number7
DOIs
Publication statusPublished - 2000 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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