TY - JOUR
T1 - Morphological defects on Be-doped AlGaAs layers grown by MBE
AU - Liu, Wen Chau
AU - Guo, Der Feng
AU - Sun, Chung Yih
AU - Lour, Wen Shiung
N1 - Funding Information:
forTheherauthorskind assistancewould likeintoMBEthankgrowth.Miss H.R.PartSzeof this work was sponsored by the National Science Council of the Republic of China under Contract
PY - 1991/12/1
Y1 - 1991/12/1
N2 - The primary surface morphology, oval defects, of MBE-grown Be-doped AlGaAs layers has been studied using two different As partial pressure control methods, i.e., thermocouple (TC) and nude ion gauge (NIG) methods. The observed defect density has been studied as a systematic function of growth parameters, including doping concentration, substrate temperature, growth rate, epilayer thickness, and As partial pressure. The protrusion-induced oval defects were formed during MBE growth. The primary origin of the oval defects generated in our system is believed to be the presence of non-volatile III2O3 oxide. However, an oval defect density less than 600 cm-2 has been obtained through optimization of the growth parameters, and after paying careful attention to substrate preparation and vacuum conditions.
AB - The primary surface morphology, oval defects, of MBE-grown Be-doped AlGaAs layers has been studied using two different As partial pressure control methods, i.e., thermocouple (TC) and nude ion gauge (NIG) methods. The observed defect density has been studied as a systematic function of growth parameters, including doping concentration, substrate temperature, growth rate, epilayer thickness, and As partial pressure. The protrusion-induced oval defects were formed during MBE growth. The primary origin of the oval defects generated in our system is believed to be the presence of non-volatile III2O3 oxide. However, an oval defect density less than 600 cm-2 has been obtained through optimization of the growth parameters, and after paying careful attention to substrate preparation and vacuum conditions.
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U2 - 10.1016/0022-0248(91)90419-6
DO - 10.1016/0022-0248(91)90419-6
M3 - Article
AN - SCOPUS:0026366452
SN - 0022-0248
VL - 114
SP - 700
EP - 706
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -