Morphological stability in epitaxially strained films on a substrate with finite thickness

Jian Ming Lu, Ming Horng Su, Jee Gong Chang, Chi-Chuan Hwang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


This paper investigates the morphological stability of epitaxial films growing heteroepitaxially on ultra-thin substrates. The misfitting strain model is incorporated into the quasi-static mechanical equilibrium system. The interfacial evolution equation between the vapour and film phases is used to solve the film evolution. The perturbation method of normal modes is used to derive the analytical form of the normal-mode growth rate. Additionally, this paper investigates the dynamic behaviour of the vapour-film interface. The results of the study show that a decrease in substrate thickness tends to stabilize the system regardless of whether the stiffness ratio, ρ (i.e: the ratio of film stiffness to substrate stiffness) is less than, equal to or greater than unity. Furthermore, it is found that the effects of a finite substrate thickness on the stability behaviour of the system are quite profound, and that this is particularly true when the film thickness is close to hc with values of stiffness ratio greater than unity.

Original languageEnglish
Pages (from-to)240-248
Number of pages9
JournalJournal of Physics D: Applied Physics
Issue number2
Publication statusPublished - 2004 Jan 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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