Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

Chia Yun Chen; Ching Ping Wong

doi:10.1039/c3cc43466d

Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

Chia Yun Chen, Ching Ping Wong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.

Original language	English
Pages (from-to)	7295-7297
Number of pages	3
Journal	Chemical Communications
Volume	49
Issue number	66
DOIs	https://doi.org/10.1039/c3cc43466d
Publication status	Published - 2013 Jul 23

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Chemistry
Ceramics and Composites
Metals and Alloys
Materials Chemistry
Surfaces, Coatings and Films
Catalysis

Access to Document

10.1039/c3cc43466d

Cite this

@article{bac5d8663c7940b3b815b32a844c644a,

title = "Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature",

abstract = "Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.",

author = "Chen, {Chia Yun} and Wong, {Ching Ping}",

year = "2013",

month = jul,

day = "23",

doi = "10.1039/c3cc43466d",

language = "English",

volume = "49",

pages = "7295--7297",

journal = "Chemical Communications",

issn = "1359-7345",

publisher = "Royal Society of Chemistry",

number = "66",

}

TY - JOUR

T1 - Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

AU - Chen, Chia Yun

AU - Wong, Ching Ping

PY - 2013/7/23

Y1 - 2013/7/23

N2 - Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.

AB - Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.

UR - http://www.scopus.com/inward/record.url?scp=84883496375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883496375&partnerID=8YFLogxK

U2 - 10.1039/c3cc43466d

DO - 10.1039/c3cc43466d

M3 - Article

C2 - 23846306

AN - SCOPUS:84883496375

SN - 1359-7345

VL - 49

SP - 7295

EP - 7297

JO - Chemical Communications

JF - Chemical Communications

IS - 66

ER -

Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this