MOSFET tunneling spectroscopy at low temperature

Mingqiang Bao; Fei Liu; Filipp Baron; Kang L. Wang; Ruigang Li

MOSFET tunneling spectroscopy at low temperature

Mingqiang Bao, Fei Liu, Filipp Baron, Kang L. Wang, Ruigang Li

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I _ds) together with its first and second derivatives with respect to the drain-source voltage (V _ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V _ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.

Original language	English
Pages	147-164
Number of pages	18
Publication status	Published - 2005
Event	Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Conference

Conference	Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	04-10-03 → 04-10-08

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "MOSFET tunneling spectroscopy at low temperature",

abstract = "Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I ds) together with its first and second derivatives with respect to the drain-source voltage (V ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.",

author = "Mingqiang Bao and Fei Liu and Filipp Baron and Wang, {Kang L.} and Ruigang Li",

year = "2005",

language = "English",

pages = "147--164",

note = "Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

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TY - CONF

T1 - MOSFET tunneling spectroscopy at low temperature

AU - Bao, Mingqiang

AU - Liu, Fei

AU - Baron, Filipp

AU - Wang, Kang L.

AU - Li, Ruigang

PY - 2005

Y1 - 2005

N2 - Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I ds) together with its first and second derivatives with respect to the drain-source voltage (V ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.

AB - Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I ds) together with its first and second derivatives with respect to the drain-source voltage (V ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.

UR - http://www.scopus.com/inward/record.url?scp=28544436459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28544436459&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:28544436459

SP - 147

EP - 164

T2 - Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

MOSFET tunneling spectroscopy at low temperature

Abstract

Conference

All Science Journal Classification (ASJC) codes

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