MOSFET tunneling spectroscopy at low temperature

Mingqiang Bao, Fei Liu, Filipp Baron, Kang L. Wang, Ruigang Li

Research output: Contribution to conferencePaperpeer-review

Abstract

Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I ds) together with its first and second derivatives with respect to the drain-source voltage (V ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.

Original languageEnglish
Pages147-164
Number of pages18
Publication statusPublished - 2005
EventNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Conference

ConferenceNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
Country/TerritoryUnited States
CityHonolulu, HI
Period04-10-0304-10-08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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