MOVPE-grown ultrasmall self-organized InGaN nanotips

L. W. Ji, S. J. Chang, T. H. Fang, S. J. Young, F. S. Juang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


It has been demonstrated that self-organized InGaN nanotips can be vertically grown via metal-organic vapor phase epitaxy (MOVPE) and thermal annealing. It was found that typical height of these nanotips is 20 nm with an average width of 1 nm. It was also found that the local density of vertically grown self-organized InGaN nanotips could reach 1.6 ×1013 cm-3. Furthermore, the overall uniformity in both height and width of nanotips were also demonstrated. These small sized vertical nanotips are potentially useful for field emission devices, blue light emitters and near-field microscopy.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalIEEE Transactions on Nanotechnology
Issue number1
Publication statusPublished - 2008 Jan

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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