It has been demonstrated that self-organized InGaN nanotips can be vertically grown via metal-organic vapor phase epitaxy (MOVPE) and thermal annealing. It was found that typical height of these nanotips is 20 nm with an average width of 1 nm. It was also found that the local density of vertically grown self-organized InGaN nanotips could reach 1.6 ×1013 cm-3. Furthermore, the overall uniformity in both height and width of nanotips were also demonstrated. These small sized vertical nanotips are potentially useful for field emission devices, blue light emitters and near-field microscopy.
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering