MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications

Engineering & Materials Science

• Metallorganic vapor phase epitaxy 100%
• Semiconductor quantum wells 88%
• Semiconductor lasers 70%
• Photoluminescence 46%
• Growth temperature 45%
• Ammonia 30%
• Crystals 28%
• X ray diffraction 27%
• Blue shift 27%
• Flow rate 21%
• Full width at half maximum 21%
• Optical properties 17%
• Wavelength 12%
• Temperature 5%

Chemical Compounds

• Flow Kinetics 43%
• Photoluminescence 43%
• Ammonia 43%
• Blue 41%
• Emission Wavelength 31%
• Crystal Phase Property 29%
• Optical Property 20%
• Ambient Reaction Temperature 15%

Physics & Astronomy

• quantum wells 43%
• semiconductor lasers 43%
• ammonia 28%
• flow velocity 22%
• photoluminescence 19%
• high resolution 17%
• diffraction 15%
• crystals 13%
• indium 13%
• x rays 12%
• optical properties 9%
• temperature 8%
• room temperature 7%
• wavelengths 6%