MOVPE growth of ZnSe films on ZnO/Si templates

X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, J. Y. Zhang, Y. M. Lu, Y. C. Liu, D. Z. Shen, Y. K. Su, S. J. Chang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We report the growth and characterization of ZnSe films prepared on ZnO/Si(1 1 1) templates. It was found that the as-deposited ZnSe films are highly oriented with zinc blende structure, and the preferred crystal orientation is (1 1 1). The small X-ray diffraction (XRD) full-wide-half-maximum (FWHM) also suggests that the crystal quality of the deposited ZnSe films is reasonably good. From temperature dependent photoluminescence (PL) measurements, it was found that exciton binding energy, EB, equals 25.6 meV for the as-prepared ZnSe/ZnO/Si(1 1 1) samples.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalMaterials Chemistry and Physics
Issue number1
Publication statusPublished - 2004 Nov 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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