Multi-gas sensor and metod of fabricating the sensor

Huey-Ing Chen (Inventor), Wen-Chau Liu (Inventor)

Research output: Patent

Abstract

The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer
Original languageEnglish
Patent number8330169
Publication statusPublished - 1800

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sensors
gases
metal oxides
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Cite this

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title = "Multi-gas sensor and metod of fabricating the sensor",
abstract = "The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer",
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Multi-gas sensor and metod of fabricating the sensor. / Chen, Huey-Ing (Inventor); Liu, Wen-Chau (Inventor).

Patent No.: 8330169.

Research output: Patent

TY - PAT

T1 - Multi-gas sensor and metod of fabricating the sensor

AU - Chen, Huey-Ing

AU - Liu, Wen-Chau

PY - 1800

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N2 - The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer

AB - The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer

M3 - Patent

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