Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

Wen Shiung Lour; Wen Chau Liu; Chung Yih Sun; Der Feng Guo; Rong Chau Liu

doi:10.1006/spmi.1993.1016

Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

Wen Shiung Lour, Wen Chau Liu, Chung Yih Sun, Der Feng Guo, Rong Chau Liu

Research output: Contribution to journal › Article › peer-review

Abstract

A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the i-Al_0·5Ga_0·5As/n⁺-GaAs superlattice is used as a reflection and resonant tunneling barrier. High emitter injection efficiency and hence high current gain are sustained. In the transistor operation, a current gain of 65 was obtained with double-negative differential resistance. The experimental processes and device D.C. performance were demonstrated first. Then a great number of circuit applications, i.e. frequency multiplier, multiple-valued logic, and parity bit generator, using the SE-RTBT and exhibiting reduced complexities will be discussed. Thus, the SE-RTBT offers strong potential for use in very high-speed and high density integrated circuits.

Original language	English
Pages (from-to)	81-86
Number of pages	6
Journal	Superlattices and Microstructures
Volume	13
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1993.1016
Publication status	Published - 1993 Jan

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1993.1016

Cite this

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title = "Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications",

abstract = "A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the i-Al0·5Ga0·5As/n+-GaAs superlattice is used as a reflection and resonant tunneling barrier. High emitter injection efficiency and hence high current gain are sustained. In the transistor operation, a current gain of 65 was obtained with double-negative differential resistance. The experimental processes and device D.C. performance were demonstrated first. Then a great number of circuit applications, i.e. frequency multiplier, multiple-valued logic, and parity bit generator, using the SE-RTBT and exhibiting reduced complexities will be discussed. Thus, the SE-RTBT offers strong potential for use in very high-speed and high density integrated circuits.",

author = "Lour, {Wen Shiung} and Liu, {Wen Chau} and Sun, {Chung Yih} and Guo, {Der Feng} and Liu, {Rong Chau}",

year = "1993",

month = jan,

doi = "10.1006/spmi.1993.1016",

language = "English",

volume = "13",

pages = "81--86",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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T1 - Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

AU - Sun, Chung Yih

AU - Guo, Der Feng

AU - Liu, Rong Chau

PY - 1993/1

Y1 - 1993/1

N2 - A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the i-Al0·5Ga0·5As/n+-GaAs superlattice is used as a reflection and resonant tunneling barrier. High emitter injection efficiency and hence high current gain are sustained. In the transistor operation, a current gain of 65 was obtained with double-negative differential resistance. The experimental processes and device D.C. performance were demonstrated first. Then a great number of circuit applications, i.e. frequency multiplier, multiple-valued logic, and parity bit generator, using the SE-RTBT and exhibiting reduced complexities will be discussed. Thus, the SE-RTBT offers strong potential for use in very high-speed and high density integrated circuits.

AB - A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the i-Al0·5Ga0·5As/n+-GaAs superlattice is used as a reflection and resonant tunneling barrier. High emitter injection efficiency and hence high current gain are sustained. In the transistor operation, a current gain of 65 was obtained with double-negative differential resistance. The experimental processes and device D.C. performance were demonstrated first. Then a great number of circuit applications, i.e. frequency multiplier, multiple-valued logic, and parity bit generator, using the SE-RTBT and exhibiting reduced complexities will be discussed. Thus, the SE-RTBT offers strong potential for use in very high-speed and high density integrated circuits.

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JO - Superlattices and Microstructures

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Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

Abstract

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