Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

Wen Shiung Lour, Wen Chau Liu, Chung Yih Sun, Der Feng Guo, Rong Chau Liu

Research output: Contribution to journalArticlepeer-review


A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the i-Al0·5Ga0·5As/n+-GaAs superlattice is used as a reflection and resonant tunneling barrier. High emitter injection efficiency and hence high current gain are sustained. In the transistor operation, a current gain of 65 was obtained with double-negative differential resistance. The experimental processes and device D.C. performance were demonstrated first. Then a great number of circuit applications, i.e. frequency multiplier, multiple-valued logic, and parity bit generator, using the SE-RTBT and exhibiting reduced complexities will be discussed. Thus, the SE-RTBT offers strong potential for use in very high-speed and high density integrated circuits.

Original languageEnglish
Pages (from-to)81-86
Number of pages6
JournalSuperlattices and Microstructures
Issue number1
Publication statusPublished - 1993 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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