Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin, Jian Fu Tang, Hsiu Hsien Su, Cheng Shong Hong, Chih Yu Huang, Sheng Yuan Chu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Original languageEnglish
Article number244506
JournalJournal of Applied Physics
Volume119
Issue number24
DOIs
Publication statusPublished - 2016 Jun 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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