Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin; Jian Fu Tang; Hsiu Hsien Su; Cheng Shong Hong; Chih Yu Huang; Sheng Yuan Chu

doi:10.1063/1.4955063

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin, Jian Fu Tang, Hsiu Hsien Su, Cheng Shong Hong, Chih Yu Huang, Sheng Yuan Chu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li_0.06Zn_0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li⁺ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Original language	English
Article number	244506
Journal	Journal of Applied Physics
Volume	119
Issue number	24
DOIs	https://doi.org/10.1063/1.4955063
Publication status	Published - 2016 Jun 28

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4955063

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title = "Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current",

abstract = "The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.",

author = "Lin, {Chun Cheng} and Tang, {Jian Fu} and Su, {Hsiu Hsien} and Hong, {Cheng Shong} and Huang, {Chih Yu} and Chu, {Sheng Yuan}",

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doi = "10.1063/1.4955063",

language = "English",

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T1 - Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

AU - Lin, Chun Cheng

AU - Tang, Jian Fu

AU - Su, Hsiu Hsien

AU - Hong, Cheng Shong

AU - Huang, Chih Yu

AU - Chu, Sheng Yuan

PY - 2016/6/28

Y1 - 2016/6/28

N2 - The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

AB - The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

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Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

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