TY - GEN
T1 - Multi-visit TAMs to reduce the post-bond test length of 2.5D-SICs with a passive silicon interposer base
AU - Chi, Chun Chuan
AU - Marinissen, Erik Jan
AU - Goel, Sandeep Kumar
AU - Wu, Cheng Wen
PY - 2011/12/1
Y1 - 2011/12/1
N2 - 2.5D Stacked ICs (2.5D-SICs) consist of multiple active dies (or 3D towers of active dies), which are placed side-by-side on top of and interconnected through a passive silicon interposer base which contains Through-Silicon Vias (TSVs). A previously presented post-bond test and Design-for-Test(DfT) strategy for such 2.5D-SICs implements a serial Test Access Mechanism (TAM) for interposer and micro-bump testing. In addition, it tries to identify an as-wide-as-possible set of functional interposer interconnects that can be reused as parallel TAMs to the various dies. In this paper, we extend that approach with the concept of Multi-Visit TAMs, i.e., parallel TAMs which are allowed to visit the same die more than once. For minimal additional hardware costs, the Multi-Visit TAMs succeed significantly more often in identifying a valid parallel TAM and achieve significantly lower test lengths.
AB - 2.5D Stacked ICs (2.5D-SICs) consist of multiple active dies (or 3D towers of active dies), which are placed side-by-side on top of and interconnected through a passive silicon interposer base which contains Through-Silicon Vias (TSVs). A previously presented post-bond test and Design-for-Test(DfT) strategy for such 2.5D-SICs implements a serial Test Access Mechanism (TAM) for interposer and micro-bump testing. In addition, it tries to identify an as-wide-as-possible set of functional interposer interconnects that can be reused as parallel TAMs to the various dies. In this paper, we extend that approach with the concept of Multi-Visit TAMs, i.e., parallel TAMs which are allowed to visit the same die more than once. For minimal additional hardware costs, the Multi-Visit TAMs succeed significantly more often in identifying a valid parallel TAM and achieve significantly lower test lengths.
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U2 - 10.1109/ATS.2011.36
DO - 10.1109/ATS.2011.36
M3 - Conference contribution
AN - SCOPUS:84862908575
SN - 9780769545837
T3 - Proceedings of the Asian Test Symposium
SP - 451
EP - 456
BT - Proceedings of the 20th Asian Test Symposium, ATS 2011
T2 - 20th Asian Test Symposium, ATS 2011
Y2 - 20 November 2011 through 23 November 2011
ER -