Multifinger embedded T-shaped gate graphene RF transistors with high ratio

Shu Jen Han, Satoshi Oida, Keith A. Jenkins, Darsen Lu, Yu Zhu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Gate resistance plays a key role in determining the maximum oscillation frequency fMAXof all radio frequency transistors. This letter presents a new graphene device structure having multiple-finger T-shaped gates embedded in the substrate. The structure possesses several advantages over conventional top gate structures, including low gate resistance, low parasitic capacitance, scalable gate dielectric, and simple interconnect wiring. With 1 V drain bias, fMAX up to 20 GHz, and sim 25\%$-43% higher than the current gain cutoff frequency fT, is achieved from devices with a channel length down to 250 nm.

Original languageEnglish
Article number6578134
Pages (from-to)1340-1342
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Multifinger embedded T-shaped gate graphene RF transistors with high ratio'. Together they form a unique fingerprint.

Cite this